Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
نویسنده
چکیده
AlN passivation layers grown by atomic layer epitaxy have been implemented to passivate the surface of AlGaN/GaN high electron mobility transistors (HEMTs). These layers suppress surface charge trapping effects, such as current collapse, reduction of maximum drain current, and increase of dynamic on resistance. Each passivation scheme is characterized using pulsed I-V measurements, a novel on-wafer probe card boost converter circuit, and DC off-state step stress.
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ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
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